Samsung Electronics announced on the 30th that it will start operating the semiconductor plant in Pyeongtaek Line 2.
The first production item is the 3rd generation 10-nano class (1z) LPDDR5 mobile DRAM applied with an extreme ultraviolet (EUV) process.
Pyeongtaek Line 2 will be operating as a complex line that produces DRAM and NAND flash memory. Samsung Electronics started construction of the EUV foundry production line in Pyeongtaek Line 2 in May. In June, construction of the 3D NAND flash production line was also started. Both lines are scheduled to be operational from the second half of 2021. Samsung Electronics has been building the Pyeongtaek Campus since 2015. Pyeongtaek Line 1 began mass production in June 2017. Construction of the 2nd line in Pyeongtaek started in January 2018, and this was the first time to ship DRAM. The total site size of Samsung Electronics’ Pyeongtaek campus is 2.89 million square meters. Pyeongtaek Line 2 covers a total floor area of 128900m2 (the size of 16 soccer fields).
Samsung Electronics explained that the operation of the 2nd line in Pyeongtaek was “a part of the planned investment of 180 trillion won and hiring 40,000 people announced in August 2018.” Samsung Electronics announced that the total investment to be spent on the Pyeongtaek Line 2, following the Pyeongtaek Line 1, will total more than 30 trillion won. They stressed that the number of direct hiring is expected to be about 4,000 people and about 30,000 roles or more are expected to be created, including suppliers and construction workers.
Next-generation high-capacity LPDDR5 mobile DRAM
Samsung Electronics explained that the 16 gigabit (Gb) LPDDR5 mobile DRAM shipped from Pyeongtaek Line 2 was the first memory mass production product to apply EUV process. In February, Samsung Electronics mass-produced 16 gigabytes (GB) LPDDR5 DRAM, the largest capacity ever, using a second-generation 10-nano class (1y) process. This DRAM is reinforcing the premium mobile DRAM lineup to the next-generation 1z process in 6 months.
The new product’s operating speed is up to 51.2GB/s based on a 64-pin (x64, JEDEC standard) configuration package. It implemented 6400Mb/s operation speed, 16% faster than the existing 12GB mobile DRAM (LPDDR5, 5,500Mb/s) for flagship smartphones. The 16Gb LPDDR5 mobile DRAM can constitute a 16GB product with 8 chips (Die). It is possible to create a package that is 30% thinner than the existing product that adds 8 x 12Gb chips and 4 x 8Gb chips. Samsung Electronics explained that it will supply new products to global smartphone makers. It is expected that the LPDDR5 mobile DRAM will be installed in a large number from flagship smartphones released early next year. Samsung Electronics announced that it will secure high-temperature reliability and expand its use to electronic products.
“This 1z nano 16Gb LPDDR5 is a product that overcomes the most difficult development ever and breaks through the limitations of microprocessing,” said Lee Jeong-bae, vice president of the DRAM business division of Samsung Electronics’ memory division.